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A video about power semiconductor devices mentioned that there is a tradeoff between switching speed and the power rating of devices., i.e. devices with higher switching speed have lower power ratings. But I could not find any reference to this on the internet whatsoever. Only one article mentioned that power BJTs have higher current and voltage ratings than power MOSFETS which checks out with the switching speed relation but I cannot find any explanation for this. Can anyone explain if this relation between switching speed and rating is true and if it is, then what is the reason for it?
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